STD5NK40Z

STD5NK40Z-1, STD5NK40ZT4 Datasheet N-channel 400 V, 1.45 Ω typ., 3 A SuperMESH™ Power MOSFETs in IPAK and DPAK packages TAB 3 IPAK 12 G(1) D(2, TAB) S(3) TAB 23 1 DPAK Features Order codes VDS RDS(on) max. STD5NK40Z-1 STD5NK40ZT4 400 V 1.80 Ω 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected PTOT 45 W Package IPAK DPAK Applications Switching applications Description AM01475V1 These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD5NK40Z-1 STD5NK40ZT4 DS2854 - Rev 4 - September 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD5NK40Z-1, STD5NK40ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope ESD Gate-source human body model (C = 100 pF, R = 1.5 kΩ) Tj Operating junction temperature range Tstg Storage temperature range 1. Pul...