STP5NK50ZFP

STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z Datasheet N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages TAB I2PAK 1 2 3 TAB 23 1 DPAK TAB 3 2 TO-220 1 3 12 TO-220FP TAB 3 IPAK 1 2 D(2, TAB) G(1) S(3) AM01475V1 Product status link STB5NK50Z-1 STD5NK50ZT4 STP5NK50Z STP5NK50ZFP STU5NK50Z Features Order codes VDS RDS(on) max. STB5NK50Z-1 STD5NK50ZT4 STP5NK50Z 500 V 1.5 Ω STP5NK50ZFP STU5NK50Z 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected ID 4.4 A Package I2PAK DPAK TO-220 TO-220FP IPAK Applications Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS2834 - Rev 6 - September 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB5NK50Z-1,STD5NK50ZT4,STP5NK50Z,STP5NK50ZFP,STU5NK50Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) ...