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STP5NK60ZFP Dataheets PDF



Part Number STP5NK60ZFP
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL Power MOSFET
Datasheet STP5NK60ZFP DatasheetSTP5NK60ZFP Datasheet (PDF)

www.DataSheet4U.com STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STP5NK60Z STP5NK60ZFP STD5NK60Z ■ ■ ■ ■ ■ ■ Figure 1: Package Id 5A 5A 5A PTOT 90 W 25 W 90 W 3 1 2 1 3 2 VDSS@ TJmax 650 V 650 V 650 V RDS(on) < 1.6 Ω < 1.6 Ω < 1.6 Ω TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REP.

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www.DataSheet4U.com STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STP5NK60Z STP5NK60ZFP STD5NK60Z ■ ■ ■ ■ ■ ■ Figure 1: Package Id 5A 5A 5A PTOT 90 W 25 W 90 W 3 1 2 1 3 2 VDSS@ TJmax 650 V 650 V 650 V RDS(on) < 1.6 Ω < 1.6 Ω < 1.6 Ω TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING DPAK Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STP5NK60Z STP5NK60ZFP STD5NK60ZT4 MARKING P5NK60Z P5NK60ZFP D5NK60 PACKAGE TO-220 TO-220FP DPAK PACKAGING TUBE TUBE TAPE & REEL Rev. 7 December 2005 1/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM (z ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 150 5 3.16 20 90 0.72 3000 4.5 2500 Value TO-220/DPAK 600 600 ± 30 5 (*) 3.16 (*) 20 (*) 25 0.2 TO-220FP V V V A A A W W/°C V V/ns V °C Unit (z) Pulse width limited by safe operating area (1) ISD ≤ 5A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed Thermal Data TO-220/DPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.39 62.5 300 TO-220FP 5 °C/W °C/W °C (#) When mounted on 1inch² FR-4, 2 Oz copper board. Table 4: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 5 220 Unit A mJ Table 5: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 50µA VGS = 10V, ID = 2.5 A 3 3.75 1.2 Min. 600 1 50 ±10 4.5 1.6 Typ. Max. Unit V µA µA µA V Ω Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (3) td(on) tr td(off) tr tr(Voff) tf tc Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 8 V, ID = 2.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 4 690 90 20 40 16 25 36 25 12 10 24 26 6 20 34 Max. Unit S pF pF pF pF ns ns ns ns ns ns ns nC nC nC VGS = 0V, VDS = 0V to 480V VDD = 300 V, ID = 2.5 A RG = 4.7Ω VGS = 10 V (see Figure 20) VDD = 480V, ID = 5 A, RG = 4.7Ω, VGS = 10V (see Figure 20) VDD = 400V, ID = 5 A, VGS = 10V (see Figure 23) Table 8: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, VGS = 0 ISD = 5 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see Figure 21) 485 2.7 11 Test Conditions Min. Typ. Max. 5 20 1.6 Unit A A V ns µC A Note: 1. Pulsed: .


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