RF051UA1D

www.DataSheet4U.com RF051UA1D Diodes Fast recovery diode RF051UA1D zApplications General rectification z External dimensions (Unit : mm) 2.9±0.1 0.4＋0.1 －0.05 z Land size figure (Unit : mm) 1.9 0.95 0.95 Each lead has same dimension リードとも 0.16±0.1 0.06 1.6 zFeatures 1) Small power mold type. (TSMD6) 2) Very fast recovery. 3) High reliability 0.45 0.35 2.8±0.2 0.35 0.45 ＋0.2 －0.1 1.0 min. 0～0.1 0.3～0.6 0.7 0.8 (1) (2) 0.95 (3) 0.33±0.03 0.7±0.1 0.85±0.1 1.0Max TSMD6 zConstruction Silicon epitaxial planar 0.95 1.9±0.2 zStructure ROHM : TSMD6 dot (year week factory) + day z Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 3.2±0.08 8.0±0.2 3.2±0.08 4.0±0.1 φ1.1±0.1 0～0.5 5.5±0.2 3.2±0.08 1.1±0.08 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repatitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 100 100 0.5 5 150 -55 to +150 Unit V V A A ℃ ℃ (*1) Rating for a per diode zElectrical characteristics (Ta=25°C) Parameter Symbol Forward voltage VF Reverse current Reverse recovery time IR Min. - Typ. - Max. 0.98 10 25 Unit V µA ns Conditions IF=0.5A VR=100V IF=0.5A,IR=1A,Irr=0.25*IR trr 2.4 (6) (5) (4) 1/3 RF051UA1D Diodes zElectrical characteristic curves (Ta=25°C) 1 Ta=75℃ 1000000 100000 10000 1000 Ta=25℃ 100 Ta=-25℃ 10 1 Ta=150℃ Ta=12...