HFA60MC60C

www.DataSheet4U.com PD -2.463 rev. B 03/99 HFA60MC60C HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode (ISOLATED BASE) 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 V R = 600V V F(typ.)ƒ = 1.1V IF(AV) = 60A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.)ƒ = 170A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM TO-249AA Max. 600 50 24 200 220 125 50 -55 to +150 Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current  Non-Repetitive Avalanche Energy ‚ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Units V A µJ W °C 300 (0.063 in. (1.6mm) from case) Thermal - Mechanical Characteristics Parameter RθJC RθCS Wt J...