POWER MOSFET. 2SK3601-01 Datasheet

2SK3601-01 MOSFET. Datasheet pdf. Equivalent


Fuji Electric 2SK3601-01
www.DataSheet4U.com
2SK3601-01
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICOFNUJI POWERPOWER MOS FET MOSFET
OOUuT VItEWline Drawings (mm)
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
MARKING
Fig.1
Fig.1
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100 V
VDSX *5
70 V
Continuous drain current
ID Tc=25°C
±20
A
Ta=25°C
±4.4
A
Pulsed drain current
ID(puls]
±80 A
Gate-source voltage
VGS
±30 V
Non-repetitive Avalanche current IAS *2
20 A
Maximum Avalanche Energy
EAS *1
227 mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Tc=25°C
Ta=25°C
5
50
2.4 **
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
*1
*4
LV=D6S81<=µ1H0,0VVcc=4*58VVGS=*2-3T0cVh<=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc <= BVDSS, Tch<= 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
DIMENSIONS ARE IN MILLIMETERS.
MARKING
Trademark
Note:1. Dimension shown in ( ) is
reference values.
Special
specification
for customer
Lot No.
Type name
CON1N1ECGGTI:O:GNGaatete D
22 SS11: :SSoouurcrcee11
33 SS22: :SSoouurcrcee22
4G4 DD: :DDrarainin
S1
S2
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=10A VGS=10V
ID=10A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=10A
VGS=10V
RGS=10
VCC=50V
ID=20A
VGS=10V
L=100µH Tch=25°C
IF=20A VGS=0V Tch=25°C
IF=20A VGS=0V
-di/dt=100A/µs Tch=25°C
Thermalcharacteristics
Item
Symbol
Test Conditions
Thermal resistance
Rth(ch-c)
Rth(ch-a)
channel to case
channel to ambient
Rth(ch-a) **
channel to ambient
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
www.fujielectric.co.jp/denshi/scd
Min.
100
3.0
6
20
Typ. Max. Units
V
5.0 V
25 µA
250
10 100
nA
47 62 m
12 S
730 1095
pF
190 285
12 18
12 18 ns
3.8 6
23 35
8.5 13
22 33 nC
9 13.5
69
1.10
65
0.17
A
1.65 V
ns
µC
Min. Typ.
Max.
2.5
87.0
52.0
Units
°C/W
°C/W
1


2SK3601-01 Datasheet
Recommendation 2SK3601-01 Datasheet
Part 2SK3601-01
Description N-CHANNEL SILICON POWER MOSFET
Feature 2SK3601-01; www.DataSheet4U.com 2SK3601-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching .
Manufacture Fuji Electric
Datasheet
Download 2SK3601-01 Datasheet




Fuji Electric 2SK3601-01
2SK3601-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
Tc [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=20A
300
250
200
150
100
50
0
0 25 50 75 100 125 150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
5
Surface mounted on
1000mm2,t=1.6mm FR-4 PCB
4 (Drain pad area : 500mm 2)
3
2
1
0
0 25 50 75 100 125 150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
80
20V
10V
60
8V
40
7.5V
7.0V
20 6.5V
6.0V
VGS=5.5V
0
0 2 4 6 8 10 12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
10
1
0.1
0.1
1 10
ID [A]
100
2



Fuji Electric 2SK3601-01
2SK3601-01
FUJI POWER MOSFET
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.18
VGS=
5.5V 6.0V 6.5V
0.15
7.0V
7.5V
8V
0.12
0.09
10V
0.06
20V
0.03
0.00
0
10 20 30 40 50 60
ID [A]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0 max.
4.5
4.0
3.5
3.0 min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
150
125
100
max.
75
50
typ.
25
0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A, Tch=25°C
14
12
10
8
Vcc= 50V
6
4
2
0
0 10 20 30 40
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
100
10-1
10-2
10-1
Ciss
Coss
100 101
VDS [V]
Crss
102
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
3







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