Silicon MOSFET. 2SK3705 Datasheet

2SK3705 MOSFET. Datasheet pdf. Equivalent


Sanyo Semicon Device 2SK3705
Ordering number : ENN7705
www.DataSheet4U.com
2SK3705
2SK3705
N-Channl Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor driver, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
*Shows Chip Capability
*1 VDD=20V, IAV=60A, L=200µH
*2 L200µH, single pulse
Symbol
VDSS
VGSS
ID*
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=26A
ID=26A, VGS=10V
ID=26A, VGS=4V
Ratings
60
±20
60
208
2.0
35
150
--55 to +150
540
60
Unit
V
V
A
A
W
W
°C
°C
mJ
A
min
60
1.2
28
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
40 S
9.0 12.5 m
12 17 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13004QA TS IM TA-100957 No.7705-1/4


2SK3705 Datasheet
Recommendation 2SK3705 Datasheet
Part 2SK3705
Description N-Channl Silicon MOSFET
Feature 2SK3705; www.DataSheet4U.com Ordering number : ENN7705 2SK3705 N-Channl Silicon MOSFET 2SK3705 Features •.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SK3705 Datasheet




Sanyo Semicon Device 2SK3705
2SK3705
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Marking : K3705
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=52A
VDS=30V, VGS=10V, ID=52A
VDS=30V, VGS=10V, ID=52A
IS=52A, VGS=0
Ratings
min typ max
Unit
5500
pF
750 pF
550 pF
38 ns
215 ns
380 ns
280 ns
100 nC
18 nC
16 nC
1.0 1.2 V
Package Dimensions
unit : mm
2063A
10.0
3.2
4.5
2.8
1.6
1.2
0.75
123
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=26A
RL=1.15
D VOUT
2SK3705
P.G 50S
2.55 2.55
SANYO : TO-220ML
Unclamped Inductive Test Circuit
50
RG
L
DUT
15V
0V
50
VDD
ID -- VDS
100
Tc=25°C
90 4V
80
70
60
50
40
30 VGS=3V
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V IT06725
100
VDS=10V
90
ID -- VGS
80
70
60
50
40
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Gate-to-Source Voltage, VGS -- V IT06726
No.7705-2/4



Sanyo Semicon Device 2SK3705
2SK3705
RDS(on) -- VGS
30
ID=26A
25
25
20
20
15
15
Tc= 75°C
10
10 25°C
--25°C
5
5
RDS(on) -- Tc
IDI=D2=62A6,AV, GVSG=S4=V10V
0
012345678
Gate-to-Source Voltage, VGS -- V
yfs-- ID
100
7 VDS=10V
5
3 25°C
2
10
Tc= --257°5C°C
7
5
3
2
9 10
IT06727
1.0
0.1
2 3 5 7 1.0
2 3 5 7 10
1000
VDD=30V
7 VGS=10V
5
Drain Current, ID -- A
SW Time -- ID
td(off)
23
5 7 100
IT06729
3
tf
2
100
7 tr
5 td(on)
3
2
10
0.1
2 3 5 7 1.0
2 3 5 7 10
2 3 5 7 100
10
VDS=30V
Drain Current, ID -- A
VGS -- Qg
IT06731
9 ID=52A
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100
Total Gate Charge, Qg -- nC
IT06733
0
--50 --25
100
7
5
VGS=0
3
2
0 25 50 75 100
Case Temperature, Tc -- °C
IF -- VSD
125 150
IT06728
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
10000
7
5
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Diode Forward Voltage, VSD -- V IT06730
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
1000
7
5
3
2
Coss
Crss
100
0
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT06732
ASO
5
3 IDP=208A
2
100
7
ID=60A
5
3
2
10
7
5
3 Operation in this area
2 is limited by RDS(on).
1.0
7
5
<10µs
100µ1s0µs
DC ope1ra0t0i1om0nms1sms
3
2
Tc=25°C
Single pulse
0.1
0.1 2 3 5 7 1.0
2 3 5 7 10
23
Drain-to-Source Voltage, VDS -- V
5 7 100
IT06734
No.7705-3/4







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