IXFC15N80Q

www.DataSheet4U.com IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS(on) = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns ISOPLUS220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min leads to tab mounting force with clip Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 230 -40 ... +150 150 -40 ... +150 300 2500 11...65 / 2.5...15 2 W °C °C °C °C V N/lb g Maximum Ratings 800 800 ± 20 ± 30 13 60 15 30 1.0 10 V V V V A A A mJ J V/ns G = Gate S = Source Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier z G D S Isolated back surface* D = Drain Applications DC-DC converters Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDS...