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ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFC 80N08 IXFC 80N085 80 V 85 V
ID25
RDS(on)
80 A 9 mΩ 80 A 9 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings ISOPLUS 220TM 80N08 80N085 80 85 ± 20 ± 30 80 80 75 320 30 1.0 5 230 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C
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G D S G = Gate, S = Source * Patent pending Isolated back surface* D = Drain,
Features
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1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS t = 1 minute leads-to-tab
300
11..65/2.4..11 Nm/lb 2500 2 V~ g
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsicRectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80N08 80N085 2.0 80 85 4.0 ± 100 TJ = 25°C TJ = 125°C V V nA
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VDSS VGS(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = 250 µA V DS = VGS, ID = 4 mA V GS = ±20 VDC, VDS = 0 V DS = VDSS VGS = 0 V V GS = 10 V, ID = IT Notes 1, 2
DC-DC converters Batterychargers Switched-mode and resonant-mode power supplies DC choppers AC motor control
Advantages
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50 µ A 1 mA 9 mΩ
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Easy assembly: no screws or isolation foils required Space savings High power density Low collector capacitance to ground (low EMI)
98851 (8/01)
© 2001 IXYS All rights reserved
IXFC 80N08 IXFC 80N085
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 35 55 4800 V GS = 0 V, VDS = 25 V, f = 1 MHz 1675 590 50 V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 2.5 Ω (External) 75 95 31 180 V GS = 10 V, VDS = 0.5 VDSS, ID = IT Notes 2 42 75 0.54 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS220 OUTLINE
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
V DS = 10 V; ID = IT Notes 1, 2
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = 25A -di/dt = 100 A/µs, VR = 50 V Test Conditions V GS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 320 1.5 200 0.5 6 A A V ns µC A
Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2. IT = 40A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
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