IXFC96N15P

www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 96N15P VDSS = 150 V ID25 = 42 A RDS(on) = 26 mΩ < 200 ns trr N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, 1 minute Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC TC TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C = 25°C = 25°C Maximum Ratings 150 150 ±20 ±30 42 250 60 40 1.0 10 120 -55 ... +175 175 -55 ... +150 300 11...65/2.4...11 2500 3 V V V V A A A mJ J V/ns W °C °C °C °C N/lb ~V g G D S Isolated back surface* G = Gate S = Source D = Drain IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control Advantages z Easy assembly: no screws, or isolation foils required z Space savings z High power density z Low collector capacitance to ground (low EMI) Symbol Test Condi...