MGF1953A Datasheet PDF - Mitsubishi Electric

www.DataSheet4U.com Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless Ceramic ...

www.DataSheet4U.com Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless Ceramic Package) DESCRIPTION The MGF1953A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB Glp=6.0dB , P1dB=20dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers Fig.1 QUALITY GRADE GG RECOMMENDED BIAS CONDITION VDS=6V, ID=100mA ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25°C ) Ratings -10 -10 400 1 125 -65 to +125 (Ta=25°C ) Unit V V mA W °C °C ELECTRICAL CHARACTERISTICS Synbol V(BR)GDO IDSS VGS(off) P1dB Glp Parameter Gate to drain breakdown voltage Saturated drain curre...