P6503NJ

www.DataSheet4U.com NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 65m£[ 150m£[ ID 4A -3A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) 1 1 SYMBOL VDS VGS N-Channel P-Channel 30 ±20 4 3 10 2 1.3 -55 to 150 275 -30 ±20 -3 -2 -10 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 110 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 1 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 0.9 -0.9 1.5 -1.5 2.5 -2.5 ±100 ±100 1 -1 µA 10 -10 V MIN TYP MAX ...