QST4

www.DataSheet4U.com QST4 Transistors Low frequency amplifier QST4 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) 2.8 1.6 (1) (4) (5) (6) 0.4 zFeatures 1) A collector current is large. 2) VCE(sat) : max. −250mV At IC=−1.5A / IB=−30mA 0.16 (3) (2) Each lead has same dimensions ROHM : TSMT6 QST4 Abbreviated symbol : T04 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −15 −12 −6 −3 −6 500 1.25 150 −55 to +150 Unit V V V A A∗1 mW∗2 W ∗3 °C °C zEquivalent circuit (6) (5) (4) Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature (1) (2) (3) ∗1 Single pulse, PW=1ms ∗2 Each Termminal Mounted on a Recommended ∗3 Mounted on a 25mm×25mm× t 0.8mm Ceramic substrate zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −15 −12 −6 − − − 270 − − Typ. − − − − − −120 − 280 30 Max. − − − −100 −100 −250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−10µA IC=−1mA IE=−10µA VCB=−15V VEB=−6V IC=−1.5A, IB=−30mA VCE=−2V, IC=−500mA ∗ VCE=−2V, IE=500mA, f=100MHz ∗ VCB=−10V, IE=0A, f=1MHz 0.85 ...