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QST6 Dataheets PDF



Part Number QST6
Manufacturers Rohm
Logo Rohm
Description Low frequency amplifier
Datasheet QST6 DatasheetQST6 Datasheet (PDF)

www.DataSheet4U.com QST6 Transistors Low frequency amplifier QST6 !Application Low frequency amplifier Driver !External dimensions (Units : mm) 2.8 1.6 (1) 1) A collector current is large. 2) VCE(sat) < = − 180mV At I C = − 1A / IB = − 50mA 0.16 (3) (2) !Features (4) (5) (6) 0.4 Each lead has same dimensions Abbreviated symbol : T06 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector cu.

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www.DataSheet4U.com QST6 Transistors Low frequency amplifier QST6 !Application Low frequency amplifier Driver !External dimensions (Units : mm) 2.8 1.6 (1) 1) A collector current is large. 2) VCE(sat) < = − 180mV At I C = − 1A / IB = − 50mA 0.16 (3) (2) !Features (4) (5) (6) 0.4 Each lead has same dimensions Abbreviated symbol : T06 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg ∗1 Single pulse, PW=1ms ∗2 Each Termminal Mounted on a Recommended !Equivalent circuit Limits −15 −12 −6 −2 −4 500 150 −55~+150 Unit V V V A A∗1 mW∗2 °C °C (6) (5) (4) (1) (2) (3) !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −15 −12 −6 − − − 270 − − Typ. − − − − − −100 − 360 15 Max. − − − −100 −100 −180 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−10µA IC=−1mA IE=−10µA VCB=−15V VEB=−6V IC=−1A, IB=−50mA VCE=−2V, IC=−200mA ∗ VCE=−2V, IE=200mA, f=100MHz ∗ VCB=−10V, IE=0A, f=1MHz 0.85 2.9 1/2 QST6 Transistors !Packaging specifications Package Type Code Basic ordering unit (pieces) QST6 Taping TR 3000 !Electrical characteristic curves BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 Ta=100°C 10 −1 Ta=25°C PULSED DC CURRENT GAIN : hFE VBE(sat) 1 Ta=−40°C Ta=25°C Ta=100°C 25°C −40°C 100 −0.1 IC/IB=50 20 10 −0.01 VCE(sat) 0.1 Ta=100°C Ta=25°C Ta=−40°C 0.01 IC/IB=20 PULSED 0.001 0.001 0.01 0.1 1 10 VCE=−2V PULSED 10 −0.001 −0.01 −0.1 −1 −10 −0.001 −0.001 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig1. DC current gain vs.collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs.collector current 1000 Ta=25°C VCE=−2V PULSED Fig.3 Collector-emitter saturation voltage vs.collector current 1000 −10 TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) −1 Ta=100°C 25°C −40°C −0.1 SWITCHING TIME : (ns) 100 tstg 100 tdon tf 10 Ta=25°C tr −0.01 VCE=−2V Ta=25°C PULSED −0.001 0 −0.5 −1 PULSED IC=20 IB1=−20 IB=2 10 0.001 0.01 0.1 1 10 1 −0.001 −0.01 −0.1 −1 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs.emitter current Fig.6 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25°C IE=0A f=1MHz 100 Cib 10 Cob 1 −0.1 −1 −10 −100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig7. Collector output capacitance vs.collector-base voltage Emitter input capacitance vs.emitter-base voltage 2/2 .


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