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QST6 Transistors
Low frequency amplifier
QST6
!Application Low frequency amplifier Driver !External dimensions (Units : mm)
2.8 1.6
(1)
1) A collector current is large. 2) VCE(sat) < = − 180mV At I C = − 1A / IB = − 50mA
0.16
(3) (2)
!Features
(4) (5) (6)
0.4
Each lead has same dimensions
Abbreviated symbol : T06
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg
∗1 Single pulse, PW=1ms ∗2 Each Termminal Mounted on a Recommended
!Equivalent circuit
Limits −15 −12 −6 −2 −4 500 150 −55~+150 Unit V V V A A∗1 mW∗2 °C °C
(6) (5) (4)
(1)
(2)
(3)
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
∗ Pulsed
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. −15 −12 −6 − − − 270 − −
Typ. − − − − − −100 − 360 15
Max. − − − −100 −100 −180 680 − −
Unit V V V nA nA mV − MHz pF
Conditions IC=−10µA IC=−1mA IE=−10µA VCB=−15V VEB=−6V IC=−1A, IB=−50mA VCE=−2V, IC=−200mA ∗ VCE=−2V, IE=200mA, f=100MHz ∗ VCB=−10V, IE=0A, f=1MHz
0.85
2.9
1/2
QST6 Transistors
!Packaging specifications
Package Type Code Basic ordering unit (pieces) QST6 Taping TR 3000
!Electrical characteristic curves
BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1000 Ta=100°C
10
−1
Ta=25°C PULSED
DC CURRENT GAIN : hFE
VBE(sat)
1
Ta=−40°C Ta=25°C Ta=100°C
25°C −40°C 100
−0.1 IC/IB=50 20 10 −0.01
VCE(sat)
0.1
Ta=100°C Ta=25°C Ta=−40°C
0.01 IC/IB=20 PULSED 0.001 0.001 0.01 0.1 1 10
VCE=−2V PULSED 10 −0.001 −0.01 −0.1 −1 −10
−0.001 −0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig1. DC current gain vs.collector current
Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs.collector current
1000 Ta=25°C VCE=−2V PULSED
Fig.3 Collector-emitter saturation voltage vs.collector current
1000
−10
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR CURRENT : IC (A)
−1 Ta=100°C 25°C −40°C −0.1
SWITCHING TIME : (ns)
100
tstg
100
tdon tf
10
Ta=25°C tr
−0.01 VCE=−2V Ta=25°C PULSED −0.001 0 −0.5 −1
PULSED IC=20 IB1=−20 IB=2
10 0.001 0.01 0.1 1 10
1 −0.001
−0.01
−0.1
−1
BASE TO EMITTER CURRENT : VBE (V)
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
Fig.4 Grounded emitter propagation characteristics
Fig.5 Gain bandwidth product vs.emitter current
Fig.6 Switching time
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
Ta=25°C IE=0A f=1MHz
100 Cib
10
Cob
1 −0.1
−1 −10 −100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig7. Collector output capacitance vs.collector-base voltage Emitter input capacitance vs.emitter-base voltage
2/2
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