Active Bias Gain Block
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Product Description
Sirenza Microdevices’ SGB-4333 is a high performance SiGe HBT MMIC amplifier ut...
Description
www.DataSheet4U.com
Product Description
Sirenza Microdevices’ SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-4333 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-4333 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.
SGB-4333
DC – 3 GHz Active Bias Gain Block
Product Features
Functional Block Diagram
Vbias VCC NC NC Active Bias
NC NC
NC NC RFOUT
High reliability SiGe HBT Technology Robust Class 1C ESD Simple and small size P1dB = 10.0dBm @ 1950MHz IP3 = 22.5 dBm @ 1950MHz Low Thermal Resistance = 76 C/W
RFIN NC
NC
Applications
3V Battery operated applications LO buffer amp RF pre-driver and RF receive path
Unit MHz Min. DC 17.5 dB 13.0 14.5 14.0 11.5 dBm 8.5 10.0 9.5 25.0 dB 20.0 22.5 21.0 dB dB mA dB ºC/W 8.5 8.5 48 10.5 10.5 56 4.0 76 62 5.0 16.0 Typ. Max. 3000
Key Specifications
Symbol fO S21 Parameters: Test Conditions Z0 = 50Ω, VCC = 3.0V, Ic = 56mA, T = 30ºC) Frequency of Operation Small Signal Gain –...
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