N-Channel 60-V (D-S) MOSFET
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Si7120DN
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
FEATURES
ID (A)
...
Description
www.DataSheet4U.com
Si7120DN
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
FEATURES
ID (A)
10 8.2
rDS(on) (W)
0.019 @ VGS = 10 V 0.028 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKr 1212-8 Package with Low 1.07-mm Profile D 100% Rg Tested
RoHS
COMPLIANT
Available
APPLICATIONS
PowerPAK 1212-8
D Primary Side Switch D Synchronous Rectification
D
3.30 mm
S 1 2 S 3 S
3.30 mm
4 D 8 7 D 6 D 5 D
G
G
Ordering Information: Si7120DN-T1 Si7120DN-T1—E3 (Lead (Pb)-Free)
S N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c L = 0.1 0 1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
60 "20 10 8.0 40 3.2 22 24 3.8 2.4
Steady State
Unit
V
6.3 5.1 A
1.3
mJ 1.5 1.0 W
−55 to 150 260
_C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
26 65 1.9
Maximum
33 81 2.4
Unit
_C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?7...
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