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UMF19N Dataheets PDF



Part Number UMF19N
Manufacturers Rohm
Logo Rohm
Description Power management
Datasheet UMF19N DatasheetUMF19N Datasheet (PDF)

www.DataSheet4U.com EMF19 / UMF19N Transistors Power management (dual transistors) EMF19 / UMF19N 2SC4617 and DTC123EE are housed independently in a EMT or UMT package. zExternal dimensions (Units : mm) zApplication Power management circuit EMF19 0.22 (4) (5) (6) (3) (2) zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 1.2 1.6 (1) 0.13 Each lead has same dimensions ROHM : EMT6 Abbreviated symbol :F19 1.3 0.65 0.7 0.9 0.2 (6) 1..

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www.DataSheet4U.com EMF19 / UMF19N Transistors Power management (dual transistors) EMF19 / UMF19N 2SC4617 and DTC123EE are housed independently in a EMT or UMT package. zExternal dimensions (Units : mm) zApplication Power management circuit EMF19 0.22 (4) (5) (6) (3) (2) zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 1.2 1.6 (1) 0.13 Each lead has same dimensions ROHM : EMT6 Abbreviated symbol :F19 1.3 0.65 0.7 0.9 0.2 (6) 1.25 0.15 zEquivalent circuits (3) (2) (1) 2.1 0.1Min. 0to0.1 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 DTr2 R2 (4) (5) (6) R1 Tr1 Abbreviated symbol : F19 R1=2.2kΩ R2=2.2kΩ zPackaging specifications Type EMF19 EMT6 F19 T2R 8000 UMF19N UMT6 F19 TR 3000 Package Marking Code Basic ordering unit(pieces) (1) 2.0 (5) (2) zStructure Silicon epitaxial planar transistor (4) 0.65 (3) UMF19N 0.5 0.5 0.5 1.0 1.6 Rev.A 1/4 EMF19 / UMF19N Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 60 50 7 150 150 (TOTAL) 150 −55∼+150 Unit V V V mW ∗ ˚C ˚C mA ∗ 120mW per element must not be exceeded. DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Symbol Limits VCC 50 VIN −10~+20 IC 100 IO 100 PC 150(TOTAL) Tj 150 Tstg −55~+150 Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Tr1 Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE 60 50 7 − − − 180 − − − − − − − − − − 0.1 0.1 0.4 390 V V V µA µA V − IC=50µA IC=1mA IE=50µA VCB=60V VEB=7V IC/IB=50mA/5mA VCE=6V, IC=1mA Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance fT Cob − − 180 2 − 3.5 MHz VCE=12V, IE= −2mA, f=100MHz PF VCB=12V, IE=0A, f=1MHz DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio ∗ Characteristics of built-in transistor. Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1 Min. − 3.0 − − − 20 − 1.54 0.8 Typ. − − 100 − − − 250 2.2 1.0 Max. 0.5 − 300 3.8 0.5 − − 2.86 1.2 Unit V V mV mA µA − MHz kΩ − Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=20mA VCE=10V, IE= −5mA, f=100MHz ∗ − − Rev.A 2/4 EMF19 / UMF19N Transistors zElectrical characteristic curves Tr1 50 COLLECTOR CURRENT : IC (mA) VCE=6V COLLECTOR CURRENT : IC (mA) 100 Ta=25˚C COLL.


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