EMF7

www.DataSheet4U.com EMF7 Transistors Power management (dual transistors) EMF7 2SC5585 and DTC123EE are housed independently in a EMT6 package. !Application Power management circuit !External dimensions (Units : mm) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 (4) (5) (6) (3) (2) (1) 1.2 1.6 0.5 !Structure Silicon epitaxial planar transistor ROHM : EMT6 0.13 Each lead has same dimensions !Equivalent circuits (3) (2) (1) Abbreviated symbol F7 DTr2 R2 (4) R1 Tr1 (5) R1=2.2kΩ R2=2.2kΩ (6) !Packaging specifications Type Package Marking Code Basic ordering unit(pieces) EMF7 EMT6 F7 T2R 8000 0.5 0.5 1.0 1.6 1/4 EMF7 Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO 15 VCEO 12 VEBO 6 IC 500 Collector current ICP 1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Unit V V V mA A mW °C °C ∗1 ∗2 DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC −10~+20 VIN 100 IC 100 IO 150(TOTAL) PC Tj 150 Tstg −55~+150 Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. ...