EMP11

www.DataSheet4U.com EMP11 Diodes Switching diode EMP11 zApplication Ultra high speed switching zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) 1.0 0.5 0.5 1.6±0.1 0.22±0.05 0.13±0.05 (5) (4) 1.2±0.1 1.6±0.1 0.45 zFeatures 1) Ultra small mold type. (EMD6) 2) High reliability (6) 0.25 0.15 0.3 0.15 0.25 0.4 0～0.1 zConstruction Silicon epitaxial planar EMD6 (1) 0.5 (2) 0.5 (3) zStructure 0.5±0.05 1.0±0.1 ROHM : EMD6 JEITA : SC-75A Size dot (year week factory) zTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 1.65±0.1 5.5±0.2 8.0±0.2 1.65±0.1 1PIN 4.0±0.1 φ0.8±0.1 0～0.1 0.65±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (Single) Average rectified forward current (Single) Surge current （t=1us） Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM Io Isurge Pd Tj Tstg Limits 80 80 300 100 4 150 150 -55 to +150 Unit V V mA mA A mW ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR Ct trr Min. Typ. Max. 1.2 0.1 3.5 4 Unit V µA pF ns Conditions IF=100mA VR=70V VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω Rev.B 1/2 1.65±0.01 1.55 EMP11 Diodes zElectrical characteristic curves (Ta=25°C) 100 Ta=75℃ REVERSE CURRENT:IR(nA) Ta=125℃ 10000 1000 Ta=25℃ 100 10 1 0.1 0.01 0.001 Ta=150℃ Ta=125℃ 10 f=1MHz FORWA...