N-Channel MOSFET. APM9430 Datasheet

APM9430 MOSFET. Datasheet pdf. Equivalent


ANPEC APM9430
www.DataSheet4U.com
APM9430
N-Channel Enhancement Mode MOSFET
Features
Pin Description
20V/4A, RDS(ON) = 40m(typ.) @ VGS = 4.5V
RDS(ON) = 110m(typ.) @ VGS = 2.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1
S2
S3
G4
8D
7D
6D
5D
SO 8
DD DD
G
Ordering and Marking Information
S SS
N-Channel MOSFET
APM 9430
APM 9430
H a n d lin g C o d e
Temp. Range
Package Code
APM 9430
XXXXX
Package Code
K : SO -8
O peration Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
VDSS
VGSS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
Rating
20
±16
4
15
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
1
www.anpec.com.tw


APM9430 Datasheet
Recommendation APM9430 Datasheet
Part APM9430
Description N-Channel MOSFET
Feature APM9430; www.DataSheet4U.com APM9430 N-Channel Enhancement Mode MOSFET Features • • • • 20V/4A, RDS(ON) = 4.
Manufacture ANPEC
Datasheet
Download APM9430 Datasheet




ANPEC APM9430
APM9430
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
PD
TJ
TSTG
RθJA
Parameter
Maximum Power Dissipation
Maximum Junction Temperature
TA = 25°C
TA = 100°C
Storage Temperature Range
Thermal Resistance - Junction to Ambient
Rating
2.5
1.0
150
-55 to 150
50
Unit
W
°C
°C/W
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
IDSS
VGS(th)
IGSS
Ra
DS(ON)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
VSDa Diode Forward Voltage
Dynamicb
Qg
Qgs
Qgd
td(ON)
Tr
td(OFF)
Tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer
VGS=0V , IDS=250µA
VDS=18V , VGS=0V
VDS=VGS , IDS=250µA
VGS=±16V , VDS=0V
VGS=4.5V , IDS=4A
VGS=2.5V , IDS=2A
ISD=2A , VGS=0V
VDS=10V , VGS=4.5V ,
ID=1A
VDD=10V , ID=1A ,
VGEN=4.5V , RG=0.2
VGS=0V , VDS=15V
Frequency=1.0MHz
Notes
a : Guaranteed by design, not subject to production testing
b : Pulse test ; pulse width 500µs, duty cycle 2%
APM9430
Min. Typ. Max.
Unit
20 V
1 µA
0.7 0.9 1.5
V
±100 nA
40 54
110 130
m
0.75 1.3
V
6.6 13
2.8
1
13 26
20 45
50 110
20 85
450
100
60
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
2
www.anpec.com.tw



ANPEC APM9430
APM9430
Typical Characteristics
Output Characteristics
15.0
VGS=4,5,6,7,8,9,10V
12.5 VGS=3V
10.0
VGS=2.5V
7.5
5.0
VGS=2V
2.5
0.0
01234567
VDS - Drain-to-Source Voltage (V)
8
Transfer Characteristics
15.0
12.5
10.0
7.5
5.0 TJ=125°C
2.5 TJ=25°C
TJ=-55°C
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.25
IDS=250µA
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
On-Resistance vs. Drain Current
0.20
0.18
0.16
0.14
VGS=2.5V
0.12
0.10
0.08
0.06
VGS=4.5V
0.04
0.02
0.00
012345678
ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
3
www.anpec.com.tw







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