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DMN601WK

Diodes Incorporated

N-Channel MOSFET

www.DataSheet4U.com Lead-free Green DMN601WK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT...


Diodes Incorporated

DMN601WK

File Download Download DMN601WK Datasheet


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www.DataSheet4U.com Lead-free Green DMN601WK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) K G A D B C S G H M SOT-323 Dim A B C D E G H J K L M α Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0° Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8° 0.65 Nominal Mechanical Data Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: See Last Page Ordering & Date Code Information: See Last Page Weight: 0.006 grams (approximate) Gate Protection Diode Source Gate J D E L Drain All Dimensions in mm ESD protected up to 2kV EQUIVALENT CIRCUIT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RθJA Tj, TSTG Value 60 ±20 300 800 200 625 -65 to +150 Units V V mA mW °C/W °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. 2. 3. 4. Device mo...




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