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Lead-free Green
DMN601WK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
NEW PRODUCT...
www.DataSheet4U.com
Lead-free Green
DMN601WK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR Features
NEW PRODUCT
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4)
K G
A D B C S G H M
SOT-323 Dim A B C D E G H J K L M α Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0° Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8°
0.65 Nominal
Mechanical Data
Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: See Last Page Ordering & Date Code Information: See Last Page Weight: 0.006 grams (approximate)
Gate Protection Diode Source Gate
J
D
E
L
Drain
All Dimensions in mm
ESD protected up to 2kV
EQUIVALENT CIRCUIT
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1)
@ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RθJA Tj, TSTG Value 60 ±20 300 800 200 625 -65 to +150 Units V V mA mW °C/W °C
Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Note: 1. 2. 3. 4.
Device mo...