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DMN601DWK

Diodes Incorporated

N-Channel MOSFET

www.DataSheet4U.com DMN601DWK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Fe...


Diodes Incorporated

DMN601DWK

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www.DataSheet4U.com DMN601DWK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) K S2 G2 D1 D2 SOT-363 Dim A G1 S1 Min 0.10 1.15 2.00 0.30 1.80 ⎯ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° A B B C C D F H J M 0.65 Nominal G H K Mechanical Data Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) J D F L L M α Drain All Dimensions in mm D2 G1 S1 Body Diode Gate S2 G2 D1 Gate Protection Diode ESD protected up to 2kV Source EQUIVALENT CIRCUIT PER ELEMENT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RθJA Tj, TSTG Value 60 ±20 305 800 200 625 -65 to +150 Units V V mA mW °C/W °C Total Power Dissipation (Note 1) Therma...




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