GB20NB32LZ

www.DataSheet4U.com STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB20NB32LZ STGB20NB32LZ-1 s s s s s VCES CLAMPED CLAMPED VCE(sat) < 2.0 V < 2.0 V IC 20 A 20 A 3 1 3 12 POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE D 2PAK I2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s ELECTRONIC IGNITION FOR AUTOMOTIVE ORDERING INFORMATION SALES TYPE STGB20NB32LZT4 STGB20NB32LZ-1 MARKING GB20NB32LZ GB20NB32LZ PACKAGE D2PAK I2PAK PACKAGING TAPE & REEL TUBE December 2003 1/11 STGB20NB32LZ - STGB20NB32LZ-1 ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) Eas Ptot ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25°C Collector Current (continuous) at Tc = 100°C Collector Current (pulsed) Single Pulse Energy Tc = 25°C Total Dissipation at Tc = 25°C Derating Factor ESD (Human Body Model) Storage Temperature Max. Operating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4 –65 to 175 175 Unit V V V ...