GFP70N03

www.DataSheet4U.com GFP70N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56) D H C N E ET R T ENF G VDS 30V RDS(ON) 8mΩ ID 70A D ® 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) G S * 0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.104 (2.64) 0.094 (2.39) Features Advanced Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency 0.410 (10.41) 0.350 (8.89) G PIN D S 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) Mechanical Data Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.17” (4.3mm) from case Mounting Torque: 10 in-lbs maximum Weight: 2.0g 0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83) 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) * May be notched or flat Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC RθJA C = 25°C unless otherwise noted) Limit 30 ± 20 70 200 62.5 25 –55 to 150 275 2.0 62.5 Unit V A W °C °C °C/W °C/W Operating Jun...