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RDS035L03
Transistors
Switching (30V, 3.5A)
RDS035L03
zFeatures 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electricity. zApplication Switching zStructure Silicon N-channel MOS FET zExternal dimensions (Units : mm)
Max.1.75
+0.2 5.0−
(5)
(4)
(8)
+0.15 3.9− +0.3 6.0− +0.1 0.5−
(1)
0.15 +0.1 1.5−
ROHM : SOP8
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
(1) (2) (3) (4)
(1)
∗
(2)
(3)
∗
∗Gate Protection Diode. ∗ A protection diode is included between the gate
and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded.
(1) (2) (3) (4) (5) (4) (6) (7) (8)
Tr1 Source Tr1 Gate Tr2 Source Tr2 Gate Tr2 Drain Tr2 Drain Tr1 Drain Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ Is Isp∗ PD Tch Tstg Limits 30 ±20 3.5 14 3.5 14 1.3 5.2 2 150 −55∼+150 Unit V V A A A A A A W ˚C ˚C
Total Power Dissipation(Tc=25˚C) Channel Temperature Storage Temperature
∗
Pw≤10ms, Duty cycle≤1%
+0.1 0.2−
Each lead has same dimensions
1.27
+0.1 0.4− 0.1
RDS035L03
Transistors
zThermal resistance (Ta=25°C)
Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit ˚C / W
zElectrical characteristics (Ta=25°C)
Parameter Gate-Source Leakage Symbol IGSS Min. − 30 − 1.0 − RDS (on) l Yfs l∗ Ciss Coss Crss td (on)∗ tr∗ td (off)∗ tf∗ Q g∗ Qgs∗ Qgd∗ − − 2.5 − − − − − − − − − − Typ. − − − − 62 105 132 − 180 95 38 6 12 20 6 6.5 1.2 1.8 Max. ±10 − 10 2.5 80 134 172 − − − − − − − − − − − S pF pF pF ns ns ns ns nC nC nC mΩ Unit µA V µA V Test Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=3.5A, VGS=10V ID=3.5A, VGS=4.5V ID=3.5A, VGS=4V ID=3.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=2A, VDD 15V VGS=10V RL=7.5Ω RGS=10Ω VDD=15V VGS=10V ID=3.5A
Drain-Source Breakdown Voltage V (BR) DSS Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge IDSS VGS (th)
∗
Pulsed
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol VSD∗ trr∗ Qrr∗ Min. − − − Typ. − 26 24 Max. 1.5 − − Unit V ns nC Test Conditions Is=3.5A, VGS=0V IDR=3.5A, VGS=0V di/dt=50A/µs
∗
Pulsed
RDS035L03
Transistors
zElectrical characteristic curves
FORWARD TRANSFER ADMITTANCE : I YfS I (S)
10
10
1
Ta=125˚C 75˚C 25˚C −25˚C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω)
REVERSE DREIN CURRENT : IDR (A)
VDS=0V Pulsed
VDS=10V Pulsed
1
1
Ta=−25˚C 25˚C 75˚C 125˚C
0.1 Ta=125˚C 7.