RDS070N03

www.DataSheet4U.com RDS070N03 Transistors Switching (30V, 7A) RDS070N03 zFeatures 1) Low Qg. 2) Low on-resistance. 3) Excellent resistance to damage from static electricity. zExternal dimensions (Units : mm) +0.1 0.4− 0.1 1.27 0.15 +0.1 1.5− Max.1.75 +0.2 5.0− (5) (4) zStructure Silicon N-channel MOS FET (8) +0.15 3.9− +0.3 6.0− +0.1 0.5− (1) zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ROHM : SOP8 (4) (1) (2) (3) (4) ∗ (1) (2) (3) ∗Gate Protection Diode. ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain zAbsolute maximum ratings (Ta = 25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ Is Isp∗ PD Tch Tstg Limits 30 ±20 7 28 7 28 1.6 Unit V V A A A A A A W °C °C 6.4 2.5 150 −55~+150 Total Power Dissipation(Tc=25°C) Channel Temperature Storage Temperature ∗Pw≤10µs, Duty cycle≤1% +0.1 0.2− Each lead has same dimensions RDS070N03 Transistors zThermal resistance (Ta = 25°C) Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit °C/W zElectrical characteristics (Ta = 25°C) Parameter Gate-Source Leakage Symbol IGSS Min. − 30 − 1.0 − Static Drain-So...