UPA2450B

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) 1 0.5±0.1 0.5±0.1 DESCRIPTION The µ PA2450B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2450B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 6 1.85±0.1 0.145±0.05 (1.45) 0.8 MAX. 2 3 5 4 0.25 +0.1 -0.05 4.4±0.1 FEATURES 2.5 V drive available Low on-state resistance RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A) Built-in G-S protection diode against ESD 5.0±0.1 7 0.05 +0 -0.05 (0.15) (0.9) ORDERING INFORMATION PART NUMBER PACKAGE (0.5) (2.2) Each lead has same dimensions. 5,6: Source 2 1,2: Source 1 4: Gate 2 3: Gate 1 7: Drain µ PA2450BTL 6PIN HWSON (4521) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Drain Current (pulse) Note2 Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20.0 ±12.0 ±8.6 ±80.0 2.5 0.7 150 −55 to +150 V V A A W W °C °C Gate1 EQUIVALENT CIRCUIT Drain1 Drain2 Total Power Dissipation (2 units) Channel Temperature Storage Temperature Body Diode Gate2 Gate Protection Diode Source2 Total Power D...