FXT553

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – FEB 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt FXT553 B C E REFER TO ZTX553 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -120 -100 -5 -2 -1 1 -55 to +200 UNIT V V V A A W °C www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. -120 -100 -5 -0.1 -0.1 -0.25 -1.1 -1 40 10 150 12 200 MHz pF TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-100V, IE=0 VEB=-4V, IC=0 IC=-150mA, IB=-15mA* IC=-150mA, IB=-15mA* IC=-150mA, VCE=-10V IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) V V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-39 ...