MRF373S

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates. Order this document by MRF373/D The RF MOSFET Line MRF373 MRF373S 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment. Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power – 60 Watts Power Gain – 13 dB Efficiency – 50% Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture Output Power – 100 Watts (PEP) D Power Gain – 11.2 dB Efficiency – 40% IMD – –30 dBc Excellent Thermal Stability 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW CASE 360B–03, STYLE 1 (MRF373) G CASE 360C–03, STYLE 1 (MRF373S) S MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature MRF373S Symbol VDSS VGS ID PD Tstg TJ Value 65 ± 20 7 1...