FDS8960C

www.DataSheet4U.com FDS8960C Dual N & P-Channel PowerTrench® MOSFET August 2005 FDS8960C Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features Q1: N-Channel RDS(on) = 0.024Ω @ VGS = 10V RDS(on) = 0.032Ω @ VGS = 4.5V Q2: P-Channel RDS(on) = 0.053Ω @ VGS = –10V RDS(on) = 0.087Ω @ VGS = –4.5V Fast switching speed RoHS compliant 7.0A, 35V –5A, –35V D1 D D1 D DD2 D2 D 5 6 7 Q2 4 3 Q1 2 1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S 8 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q1 35 (Note 1a) Q2 –35 ±25 –5 –20 2 1.6 1 0.9 –55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±20 7 20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C °C/W °C/W Thermal Characteristics Rθ JA Rθ JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 Package Marking and Ordering Information Device Mark...