IXTQ96N15P

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 96N15P IXTT 96N15P V DSS ID25 RDS(on) = 150 V = 96 A ≤ 24 mΩ Symbol VDSS VDGR VGSS VGSM I D25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL T SOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient T C = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 Maximum Ratings 150 V 150 V ±20 V ±30 V TO-3P (IXTQ) 96 A G 75 A DS 250 A 60 A 40 mJ TO-268 (IXTT) 1.0 J (TAB) 10 V/ns 480 W -55 ... +175 °C 175 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 5.0 g G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 24 m Ω Advantages l Easy to mount l Space savings l High power density ...