GaAs SPDT 2.8 V High Power Switch
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GaAs SPDT 2.8 V High Power Switch DC - 3.0 GHz
Features
• • • • • • Low Voltage Operation: 2.8V Hig...
Description
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GaAs SPDT 2.8 V High Power Switch DC - 3.0 GHz
Features
Low Voltage Operation: 2.8V High IP3: +60 dBm Low Insertion Loss: 0.40 dB at 1.0 GHz High Isolation: 24.5 dB at 1.0 GHz SOT-26 Package 0.5 micron GaAs PHEMT Process
MASWSS0029 V2
Functional Schematic
PIN 1 PIN 6
RF1 39 pF GND RF2 39 pF
V1 RFC 39 pF V2
Description
M/A-COM’s MASWSS0029 is a GaAs PHEMT MMIC single pole double throw (SPDT) high power switch in a low cost SOT-26 package. The MASWSS0029 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for CDMA handset systems that connect separate transceiver and/or GPS functions to a common antenna, as well as other related handset and general purpose applications. This part can be used in all systems operating up to 3.0 GHz requiring high power at low control voltage. The MASWSS0029 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability.
Pin Configuration
Pin No.
1 2 3 4 5 6
Pin Name
RF1 GND RF2 V2 RFC V1
Description
RF Port 1 RF Ground RF Port 2 Control 2 RF Common Port Control 1
Ordering Information1
Part Number
MASWSS0029 MASWSS0029TR MASWSS0029SMB
Absolute Maximum Ratings 2,3
Package
Bulk Packaging 1000 piece reel Sample Test Board
Parameter
Input Power (0.5 - 3 GHz, 3 V Control) Operating Voltage Operating Temperature Storage T...
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