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MCH3421 Dataheets PDF



Part Number MCH3421
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Datasheet MCH3421 DatasheetMCH3421 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN7997 MCH3421 MCH3421 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a .

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www.DataSheet4U.com Ordering number : ENN7997 MCH3421 MCH3421 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 100 ±20 0.8 3.2 0.9 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=400mA ID=400mA, VGS=10V ID=400mA, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 100 1 ±10 1.2 0.5 1.0 0.68 0.85 165 13 8.0 7 3 22 10 0.89 1.2 2.6 typ max Unit V µA µA V S Ω Ω pF pF pF ns ns ns ns Marking : KW Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2504 TS IM TB-00000253 No.7997-1/4 MCH3421 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=50V, VGS=10V, ID=0.8A VDS=50V, VGS=10V, ID=0.8A VDS=50V, VGS=10V, ID=0.8A IS=0.8A, VGS=0 Ratings min typ 4.8 0.9 0.9 0.86 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2167A 0.25 Switching Time Test Circuit VIN VDD=50V 0.3 3 0.15 10V 0V VIN ID=0.4A RL=125Ω 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 PW=10µs D.C.≤1% D VOUT G 3 MCH3421.


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