MRF571

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR571LT1/D The RF Line NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost. High Gain–Bandwidth Product fT = 8.0 GHz (Typ) @ 50 mA Low Noise Figure NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571) High Gain GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1) High Power Gain Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1) State–of–the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MMBR571LT1 MRF571 MRF5711LT1 IC = 80 mA LOW NOISE HIGH–FREQUENCY TRANSISTORS CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MMBR571LT1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ Tcase = 75°C MMBR571LT1, MRF5711LT1 Derate linearly above Tcase = 75°C @ Total Device Dissipation (1) @ TC = 75°C Derate above 75°C Operating and Storage Temperature MRF571 Tstg Symbol VCEO VCBO VEBO IC PD(max) 0.33 4.44 PD 0.58 7.73 – 55 to +150 W mW/°C Watts mW/°C °C Value 10 20 3.0 80 Unit Vdc Vdc Vdc mA CASE 317–01, STYLE 2 MACRO–X MRF571 C...