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PM75CSE120 Dataheets PDF



Part Number PM75CSE120
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description Intelligent Power Module
Datasheet PM75CSE120 DatasheetPM75CSE120 Datasheet (PDF)

www.DataSheet4U.com MITSUBISHI MITSUBISHI MODULES> PM75CSE120 PM75CSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSE120 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 75A, 1200V Current-sense IGBT for 15kHz switching • Monolithic gate drive & protection logic • Det.

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www.DataSheet4U.com MITSUBISHI MITSUBISHI MODULES> PM75CSE120 PM75CSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSE120 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 75A, 1200V Current-sense IGBT for 15kHz switching • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 11/15kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 110±1 95±0.5 2-2.54 2-2.54 2-2.54 6-2.54 17.02 10.16 10.16 10.16 3.22 PBT Screwing depth Min9.0 4-φ5.5 MOUNTING HOLES Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. VN1 NC UN VN WN FO 20 2±0.5 17 123 4 56 78 9 10 12 14 16 11 13 15 74±0.5 20 P 17.5 12 N 89±1 W V U 0.5±0.3 24.5 4-R6 26 67.4 160.64 2-φ2.54 26 6-M5NUTS 21.2 22 –0.5 +1.0 3.22 11.6 2-2.54 1.6 32.6 A : DETAIL 31.6 19.4 LABEL 4 22 10.6 A 4.5 10 B φ2.54 0.64 Sep. 2001 MITSUBISHI PM75CSE120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5kΩ NC Fo VNC W N VN1 VN UN VWPC WP VWP1 VVPC VP VVP1 VUPC UP VUP1 Rfo Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Vcc Gnd In Vcc Gnd In Vcc Gnd Si Out Gnd TEMP Si Out Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out Th NC N W V U P MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C Ratings 1200 75 150 416 –20 ~ +150 Unit V A A W °C CONTROL PART Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN • VN • WN-VNC Applied between : FO-VNC Sink current at FO terminal Ratings 20 20 20 20 Unit V V V mA Sep. 2001 MITSUBISHI PM75CSE120 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) OC & SC VCC(surge) Supply Voltage (Surge) Module Case Operating TC Temperature Storage Temperature Tstg Viso Isolation Voltage Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start Applied between : P-N, Surge value or without switching (Note-1) Ratings 800 1000 –20 ~ +100 –40 ~ +125 2500 Unit V V °C °C Vrms 60Hz, Sinusoidal, Charged part to Base, AC 1 min. (Note-1) TC measurement point is as shown below. (Base plate depth 3mm) W V U 67mm Tc THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(j-c’)Q Rth(j-c’)F Rth(c-f) Parameter Test Condition Inverter IGBT part (per 1 element), (Note-1) Inverter FWDi part (per 1 element), (Note-1) Inverter IGBT part (per 1 element), (Note-2) Inverter FWDi part (per 1 element), (Note-2) Case to fin, Thermal grease applied (per 1 module) Min. — — — — — Limits Typ. — — — — — Max. 0.30 0.47 0.17 0.27 0.027 Unit Junction to case Thermal Resistances Contact Thermal Resistance PBT (Note-2) TC measurement point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Test Condition VD = 15V, IC = 75A VCIN = 0V, Pulsed (Fig. 1) –IC = 75A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 15V↔0V VCC = 600V, IC = 75A Tj = 125°C Inductive Load (upper and lower arm) VCE = VCES, VCIN = 15V (Fig. 4) Tj = 25°C Tj = 125°C (Fig. 2) Min. — — — 0.5 — — — — — — Limits Typ. 2.4 2.1 2.5 1.0 0.15 0.4 2.5 0.7 — — Max. 3.2 2.8 3.5 2.5 0.3 1.0 3.5 1.2 1 10 Unit V V Switching Time Collector-Emitter Cutoff Current B P N °C/W µs (Fig. 3) Tj = 25°C Tj = 125°C mA Sep. 2001 MITSUBISHI PM75CSE120 FLAT-BASE TYPE INSULATED PACKAGE CONTROL PART Symbol ID Vth(on) Vth(off) OC SC toff(OC) OT OTr UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Over Current Trip Level Short Circuit Trip Level Over Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width Test Condition VN1-VNC VXP1-VXPC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC VD = 15V, VCIN = 15V VD = 15V (Fig. 5,6) Tj = 25°C Tj = 125°C (Fig. 5,6) (Fig. 5,6) Trip level Reset level Trip level Reset level (Note-3) (Note-3) Min. — — 1.2 1..


PLUTO PM75CSE120 PMB2330


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