IRG4BC10KD

www.DataSheet4U.com PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-ch an nel Benefits Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 9.0 5.0 18 18 4.0 16 10 ± 20 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A...