IRG4BC10S

www.DataSheet4U.com PD - 91786A IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR Features Extremely low voltage drop; 1.1V typical at 2A S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications Very Tight Vce(on) distribution Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Lower conduction losses than many Power MOSFET''s TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PDTC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 14 8.0 18 18 ± 20 110 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.5 ––– 2.0(0.07) Max. 3.3 ––– 50 ––– Units °C/W g (oz) www.irf.com...