IRG4BC15UD-LPBF

www.DataSheet4U.com PD - 95781 IRG4BC15UD-SPbF IRG4BC15UD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 600V Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching IGBT Co-packaged with ultra-soft-recovery antiparallel diode Industry standard D2Pak & TO-262 packages Lead-Free G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits • Best Value for Appliance and Industrial Applications High noise immune "Positive Only" gate driveNegative bias gate drive not necessary For Low EMI designs- requires little or no snubbing Single Package switch for bridge circuit applications Compatible with high voltage Gate Driver IC's Allows simpler gate drive n-channel D2Pak IRG4BC15UD-S TO-262 IRG4BC15UD-L Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 14 7.8 42 42 4.0 16 ± 20 49 19 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA RθJA Wt Juncti...