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STPS5H100

ST Microelectronics

High voltage power Schottky rectifier

STPS5H100 High voltage power Schottky rectifier Datasheet - production data A K K NC KA IPAK K K NC A NC A DPA...


ST Microelectronics

STPS5H100

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Description
STPS5H100 High voltage power Schottky rectifier Datasheet - production data A K K NC KA IPAK K K NC A NC A DPAK Features  Negligible switching losses  High junction temperature capability  Low leakage current  Good trade-off between leakage current and forward voltage drop  Avalanche specification  ECOPACK® compliant component for IPAK and DPAK on demand Description This high voltage Schottky barrier rectifier is packaged in DPAK and IPAK and designed for high frequency compact switched mode power supply such as adapters and on board DC-DC converters. Table 1: Device summary Symbol Value IF(AV) 5A VRRM 100 V Tj(max.) VF(typ.) 175 °C 0.57 V May 2017 DocID5388 Rev 13 This is information on a product in full production. 1/10 www.st.com Characteristics STPS5H100 1 Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value VRRM Repetitive peak reverse voltage 100 IF(RMS) RMS forward voltage 10 IF(AV) Average forward current, δ = 0.5, square wave TC = 165 °C 5 IFSM PARM Tstg Tj Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature(1) tp = 10 ms sinusoidal tp = 10 µs, Tj = 125 °C 75 515 -65 to +175 175 Unit V A A A W °C °C Notes: (1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Symbol Rth(j-c) Junction to case Table 3: Thermal parameters Par...




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