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ZXTP2006E6

Zetex Semiconductors

PNP LOW SAT MEDIUM POWER TRANSISTOR

www.DataSheet4U.com ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; ...


Zetex Semiconductors

ZXTP2006E6

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www.DataSheet4U.com ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES 3.5 Amps continuous current Extremely low saturation voltage (-70mV max @ 1A/100mA ) Up to 10 Amps peak current Very low saturation voltages SOT23-6 APPLICATIONS DC - DC converters Battery charging Power switches Motor control Power management functions ORDERING INFORMATION DEVICE REEL SIZE 7” 13” TAPE WIDTH 8mm embossed 8mm embossed QUANTITY PER REEL 3,000 10,000 PINOUT ZXTP2006E6TA ZXTP2006E6TC DEVICE MARKING 52 TOP VIEW ISSUE 1 - JUNE 2005 1 ZXTP2006E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor SYMBOL BV CBO BV CEO BV EBO IC I CM PD LIMIT UNIT V V V A A W mW/°C W mW/°C -25 -20 -7.5 -3.5 -10 1.1 8.8 PD 1.7 13.6 THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R ⍜ JA R ⍜ JC VALUE 113 73 UNIT °C/W °C/W Junction to ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air c...




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