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ZXTP2009Z

Zetex Semiconductors

PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR

www.DataSheet4U.com ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : ...


Zetex Semiconductors

ZXTP2009Z

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www.DataSheet4U.com ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES Extremely low equivalent on-resistance 5.5 amps continuous current Up to 15 amps peak current Very low saturation voltages < -60mV @ -1A SOT89 APPLICATIONS DC - DC converters MOSFET gate drivers Charging circuits Power switches Motor control ORDERING INFORMATION DEVICE ZXTP2009ZTA REEL SIZE 7” TAPE WIDTH 12mm QUANTITY PER REEL 1,000 units PINOUT DEVICE MARKING 53Z TOP VIEW ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ZXTP2009Z ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (b) Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Power dissipation at T A =25°C (c) Linear derating factor Power dissipation at T A =25°C (d) Linear derating factor Operating and storage temperature range T j , T stg PD PD PD SYMBOL BV CBO BV CBS BV CEO BV EBO IC I CM PD LIMIT -50 -50 -40 -7.5 -5.5 -15 0.9 7.2 1.5 12 2.1 16.8 3 24 -55 to 150 UNIT V V V V A A W mW/°C W mW/°C W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Ju...




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