www.DataSheet4U.com
ZXTP2009Z
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY BVCEO = -40V : ...
www.DataSheet4U.com
ZXTP2009Z
40V
PNP HIGH GAIN LOW SATURATION MEDIUM POWER
TRANSISTOR IN SOT89
SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION
Packaged in the SOT89 outline this new low saturation 40V
PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance 5.5 amps continuous current Up to 15 amps peak current Very low saturation voltages < -60mV @ -1A
SOT89
APPLICATIONS
DC - DC converters MOSFET gate drivers Charging circuits Power switches Motor control
ORDERING INFORMATION
DEVICE ZXTP2009ZTA REEL SIZE 7” TAPE WIDTH 12mm QUANTITY PER REEL 1,000 units
PINOUT
DEVICE MARKING
53Z
TOP VIEW
ISSUE 1 - JUNE 2005 1
SEMICONDUCTORS
ZXTP2009Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-base voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (b) Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Power dissipation at T A =25°C (c) Linear derating factor Power dissipation at T A =25°C (d) Linear derating factor Operating and storage temperature range T j , T stg PD PD PD SYMBOL BV CBO BV CBS BV CEO BV EBO IC I CM PD LIMIT -50 -50 -40 -7.5 -5.5 -15 0.9 7.2 1.5 12 2.1 16.8 3 24 -55 to 150 UNIT V V V V A A W mW/°C W mW/°C W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Ju...