ZXTP2012A

www.DataSheet4U.com ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES 3.5 amps continuous current Up to 15 amps peak current Very low saturation voltages Excellent gain up to 10 amps E-line APPLICATIONS DC - DC converters MOSFET gate drivers Power switches Motor control ORDERING INFORMATION DEVICE ZXTP2012ASTOA ZXTP2012ASTZ QUANTITY PER REEL 2,000 units / reel 2,000 units / carton PINOUT DEVICE MARKING ZXT P20 12 TOP VIEW ISSUE 2 - NOVEMBER 2005 1 SEMICONDUCTORS ZXTP2012A ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Practical power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT -100 -60 -7 -3.5 -15 1.0 8 0.71 5.7 -55 to 150 UNIT V V V A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R ⍜ JA R ⍜ JA VALUE 125 175 UNIT °C/W °C/W NOTES (a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz...