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ZXTP2027F 60V, SOT23, PNP medium power transistor
Summary
V(BR)CEV > -100V, V(BR)CEO > -60V IC(cont...
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ZXTP2027F 60V, SOT23,
PNP medium power
transistor
Summary
V(BR)CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
Features
Higher power dissipation SOT23 package High peak current Low saturation voltage 100V forward blocking voltage
Applications
MOSFET and IGBT gate driving Motor drive Relay, lamp and solenoid drive High side switches
Pinout - top view
Ordering information
Device ZXTP2027FTA Reel size (inches) 7 Tape width 8mm Quantity per reel 3,000
Device marking
951
Issue 2 - September 2005
© Zetex Semiconductors plc 2005
1
www.zetex.com
ZXTP2027F
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current(b) Base current Power dissipation @ TA=25oC(a) Linear derating factor Power dissipation @ TA=25oC(b) Linear derating factor Power dissipation @ TA=25oC(c) Linear derating factor Operating and storage temperature Symbol VCBO V(BR)CEV VCEO VEBO ICM IC IB PD PD PD Tj:Tstg Limit -100 -100 -60 -7 -10 -4 -1 1.0 8.0 1.2 9.6 1.56 12.5 -55 to +150 Unit V V V V A A A W...