ZXTP2041F

www.DataSheet4U.com ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V(BR)CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features ■ Low saturation voltage for reduced power dissipation ■ 1 to 2 amp high current capability ■ Pb-free ■ SOT23 package Applications ■ Power MOSFET gate driving ■ Low loss power switching Ordering information Device ZXTP2041FTA ZXTP2041FTC Reel size 7” 13” Tape width 8mm 8mm Quantity per reel 3,000 10,000 Pin out - top view Device marking P41 Issue 3 - November 2005 © Zetex Semiconductors plc 2005 1 www.zetex.com ZXTP2041F Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current* Peak base current Power dissipation @ TA=25°C* Operating and storage temperature Symbol VCBO VCEO VEBO ICM IC IBM PD Tj:Tstg Limit -40 -40 -5.0 -2 -1 -1 350 -55 to +150 Unit V V V A A A mW °C NOTES: * For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 3 - November 2005 © Zetex Semiconductors plc 2005 2 www.zetex.com ZXTP2041F Electrical characteristics (@TAMB = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base ...