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2PD2150 Dataheets PDF



Part Number 2PD2150
Manufacturers NXP
Logo NXP
Description NPN low VCEsat transistor
Datasheet 2PD2150 Datasheet2PD2150 Datasheet (PDF)

www.DataSheet4U.com 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 — 22 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: 2PB1424. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation S.

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www.DataSheet4U.com 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 — 22 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: 2PB1424. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1: Symbol VCEO ICM hFE Quick reference data Parameter collector-emitter voltage peak collector current DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = 2 V; IC = 0.1 A Min 180 Typ Max 20 3 390 Unit V A Philips Semiconductors 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description emitter collector base 3 2 1 3 1 sym042 Simplified outline Symbol 2 3. Ordering information Table 3: Ordering information Package Name 2PD2150 SC-62 Description plastic surface mounted package; collector pad for good heat transfer; 3 leads Version SOT89 Type number 4. Marking Table 4: 2PD2150 Marking codes Marking code M2 Type number 9397 750 14987 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 April 2005 2 of 11 Philips Semiconductors 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] [2] [3] Conditions open emitter open base open collector Min −65 −65 Max 40 20 5 1 3 500 850 1200 150 +150 +150 Unit V V V A A mW mW mW °C °C °C Tj Tamb Tstg [1] [2] [3] junction temperature ambient temperature storage temperature Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 1600 Ptot (mW) 1200 (1) 006aaa449 (2) 800 (3) 400 0 −65 −35 −5 25 55 85 115 145 175 Tamb (°C) (1) FR4 PCB; mounting pad for collector 6 cm2 (2) FR4 PCB; mounting pad for collector 1 cm2 (3) FR4 PCB; standard footprint Fig 1. Power derating curves 9397 750 14987 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 April 2005 3 of 11 Philips Semiconductors 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] [3] Min - Typ - Max 250 147 104 20 Unit K/W K/W K/W K/W Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 m2. 103 Zth(j-a) duty cycle = 1.00 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.00 0.75 0.33 006aaa450 (K/W) 102 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB; mounting pad for collector 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14987 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 April 2005 4 of 11 Philips Semiconductors 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A VCE = 2 V; IC = 0.1 A IC = 2 A; IB = 100 mA VCE = 10 V; IC = 5 mA VCE = 1 V; IC = 1 A IC = 500 mA; VCE = 2 V; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz [1] [1] Min 180 - Typ 220 20 Max 0.1 10 0.1 390 0.5 0.7 1 - Unit µA µA µA IEBO hFE VCEsat VBEon fT Cc [1] V V V MHz pF 9397 750 14987 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 April 2005 5 of 11 Philips Semiconductors .


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