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2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 01 — 22 April 2005 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: 2PB1424.
1.2 Features
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1: Symbol VCEO ICM hFE Quick reference data Parameter collector-emitter voltage peak collector current DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = 2 V; IC = 0.1 A Min 180 Typ Max 20 3 390 Unit V A
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description emitter collector base
3 2 1
3 1
sym042
Simplified outline
Symbol
2
3. Ordering information
Table 3: Ordering information Package Name 2PD2150 SC-62 Description plastic surface mounted package; collector pad for good heat transfer; 3 leads Version SOT89 Type number
4. Marking
Table 4: 2PD2150 Marking codes Marking code M2 Type number
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
2 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C
[1] [2] [3]
Conditions open emitter open base open collector
Min −65 −65
Max 40 20 5 1 3 500 850 1200 150 +150 +150
Unit V V V A A mW mW mW °C °C °C
Tj Tamb Tstg
[1] [2] [3]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
1600 Ptot (mW) 1200
(1)
006aaa449
(2)
800
(3)
400
0 −65
−35
−5
25
55
85
115 145 175 Tamb (°C)
(1) FR4 PCB; mounting pad for collector 6 cm2 (2) FR4 PCB; mounting pad for collector 1 cm2 (3) FR4 PCB; standard footprint
Fig 1. Power derating curves
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
3 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3]
Min -
Typ -
Max 250 147 104 20
Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3]
thermal resistance from junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 m2.
103 Zth(j-a) duty cycle = 1.00 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.00 0.75 0.33
006aaa450
(K/W)
102
10−1 10−5
10−4
10−3
10−2
10−1
1
10
102
t p (s)
103
FR4 PCB; mounting pad for collector 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
4 of 11
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A VCE = 2 V; IC = 0.1 A IC = 2 A; IB = 100 mA VCE = 10 V; IC = 5 mA VCE = 1 V; IC = 1 A IC = 500 mA; VCE = 2 V; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz
[1] [1]
Min 180 -
Typ 220 20
Max 0.1 10 0.1 390 0.5 0.7 1 -
Unit µA µA µA
IEBO hFE VCEsat VBEon fT Cc
[1]
V V V MHz pF
9397 750 14987
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 April 2005
5 of 11
Philips Semiconductors
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