2N6428A

www.DataSheet4U.com 2N6428A NPN Epitaxial Silicon Transistor December 2006 2N6428A NPN Epitaxial Silicon Transistor Features This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA. tm TO92 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC PD TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Junction Temperature Storage Temperature Range Ta = 25°C unless otherwise noted Parameter Value 60 50 5 200 625 150 - 55 ~ 150 Unit V V V mA mW °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics* Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE TC = 25°C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Conditions IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCB = 30V, IE = 0 VBE = 5V, IC = 0 VCE = 5V, IC = 0.01mA VCE = 5V, IC = 0.1mA VCE = 5V, IC = 1.0mA VCE = 5V, IC = 10mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5V, IC = 1.0mA...