C1226

www.DataSheet4U.com ® ISO 9001 Registered Process C1226 CMOS 1.2µ m 100V CMOS, Double Metal - Double Poly Electrical Characteristics T = 25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor Threshold Voltage VTN Body Factor γN Conduction Factor βN Effective Channel Length LeffN Width Encroachment ∆WN Punch Through Voltage BVDSSN Poly Field Threshold Voltage VTFPN Symbol P-Channel High Voltage Transistor Threshold Voltage HVTP Punch Through Voltage HVBVDSSP ON Resistance HVPR0N Operating Voltage P-Channel Low Voltage Transistor Threshold Voltage VTP Body Factor γP Conduction Factor βP Effective Channel Length LeffP Width Encroachment ∆WP BVDSSP Punch Through Voltage Poly Field Threshold Voltage VTFP(P) Minimum 0.70 120 550 Typical 0.90 700 VGS = 5V VDS = 100V 0.45 0.475 78 1.35 0.4 12 15 Typical –0.90 2500 VGS = 5V VDS = 100V –0.45 0.6 25 1.5 0.4 –12 –12 Maximum 1.10 850 Unit V V Ω Comments W/L = 147/5 0.30 64 0.65 92 5 8 Minimum –0.70 –120 2000 V V1/2 µA/V 2 µm µm V V Unit V V Ω V 100x1.5µm 100x1.5µm 100x100µm 100x1.5µm Per side Maximum –1.10 3000 Comments W/L = 139/5 -0.65 20 –0.30 30 –5 –8 V V1/2 µA/V 2 µm µm V V 100x1.5µm 100x1.5µm 100x100µm 100x1.5µm Per side © 2001 IMP, Inc. 69 Process C1226 Physical Characteristics Diffusion & Thin Films Symbol Starting Material p<100> Well (field) Sheet Resistance ρN-well...