MA26111

www.DataSheet4U.com Switching Diodes MA26111 Silicon epitaxial planar type For switching circuits  Features  Allowing high-density mounting  Short reverse recovery time trr  Small terminal capacitance Ct  High breakdown voltage: VR = 80 V 0.01±0.005 0.60±0.05 Unit: mm 2 1 1.00±0.05 0.39+0.01 −0.03 0.05±0.03 0.05±0.03  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 125 –55 to +125 Unit V V mA mA mA °C °C 1: Anode 2: Cathode 0.50±0.05 2 0.25±0.05 0.25±0.05 1 0.65±0.01 ML-2-N1 Package Marking Symbol: 1  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF VR IR Ct trr IF = 100 mA IR = 100 µA VR = 75 V VR = 0, f = 1 MHz IF = 10 mA, VR = 6 V, Irr = 0.1 IR , RL = 100 Ω 0.6 80 100 2 3 Conditions Min Typ 0.95 Max 1.2 Unit V V nA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz 3. . *: trr measurement circuit Bias Application Unit (N-50BU) tr 10% Input Pulse tp t IF Output Pulse trr t A VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Pulse Generator (PG-10N) Rs = 50 Ω ...