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MOTOROLA
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
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Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
3 1 2
MAXIMUM RATINGS (EACH DIODE)
Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC
1 ANODE
3 CATHODE/ANODE
2 CATHODE
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
MMBD352LT1 CASE 318 – 08, STYLE 11 SOT– 23 (TO – 236AB)
1 CATHODE
3 CATHODE/ANODE
2 ANODE
MMBD353LT1 CASE 318 – 08, STYLE 19 SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symb ol Min Max Unit
3 CATHODE
ANODE 1 2 ANODE
MMBD354LT1 CASE 318 – 08, STYLE 9 SOT– 23 (TO – 236AB)
OFF CHARACTERISTICS
Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. VF IR — — C — 0.25 10 1.0 pF — 0.60 V
mA
ANODE 3
CATHODE 1
2 CATHODE MMBD355LT1 CASE 318 – 08, STYLE 12 SOT– 23 (TO – 236AB)
Thermal Clad is a trademark of the Bergquist Company
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997
1
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
TYPICAL CHARACTERISTICS
100 I F, FORWARD CURRENT (mA) 1.0
10 TA = –40°C
C, CAPACITANCE (pF) 0.8
TA = 85°C
0.9
0.8
1.0
TA = 25°C
0.7
0.1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS)
0.6 0 1.0 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Capacitance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT–23 SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculat.