MMBD354LT1

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. Very Low Capacitance — Less Than 1.0 pF @ Zero Volts Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 3 1 2 MAXIMUM RATINGS (EACH DIODE) Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 1 ANODE 3 CATHODE/ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C MMBD352LT1 CASE 318 – 08, STYLE 11 SOT– 23 (TO – 236AB) 1 CATHODE 3 CATHODE/ANODE 2 ANODE MMBD353LT1 CASE 318 – 08, STYLE 19 SOT– 23 (TO – 236AB) DEVICE MARKING MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symb ol Min Max Unit 3 CATHODE ANODE 1 2 ANODE MMBD354LT1 CASE 318 – 08, STYLE 9 SOT– 23 (TO – 236AB) OFF CHARACTERISTICS Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR ...